APT12045L2VR Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT12045L2VR
1200V 26A 0.450W
POWER MOS V^®
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
TO-264
Max
• TO-264 MAX Package
• 100% Avalanche Tested
D
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
G
S
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
APT12045L2VR
Drain-Source Voltage
L _{Continuous Drain Current @ TC = 25°C}
ICA ^{Pulsed Drain Current 1}
N ^{Gate-Source Voltage Continuous}
H _{Gate-Source Voltage Transient}
EC ^{N Total Power Dissipation @ T}C ^{= 25°C}
T _{IO Linear Derating Factor}
E T _{Operating and Storage Junction Temperature Range}
NC _MA Lead Temperature: 0.063" from Case for 10 Sec.
VA ^{R Avalanche Current 1 (Repetitive and Non-Repetitive)}
D ^O Repetitive Avalanche Energy ¹
A _{INF Single Pulse Avalanche Energy 4}
1200
26
104
±30
±40
830
6.64
-55 to 150
300
26
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV_DSS
I_D(on)
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 5mA)
MIN
1200
26
2
TYP
MAX
0.450
25
250
±100
4
UNIT
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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