APT12040JVFR Datasheet, PDF (1/4 Pages) Advanced Power Technology – POWER MOS V FREDFET

APT12040JVFR
1200V 26A 0.400Ω
POWER MOS V^® FREDFET
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
ISOTOP^®
"UL Recognized"
• Faster Switching
• Avalanche Energy Rated
D
• Lower Leakage
• Popular SOT-227 Package
MAXIMUM RATINGS
• FAST RECOVERY BODY DIODE
G
S
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
APT12040JVFR
1200
26
104
±30
±40
700
5.6
-55 to 150
300
26
50
3600
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS
I_D(on)
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 5mA)
1200
26
2
0.400
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Amps
Ohms
µA
nA
Volts
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