APT1201R5BVFR Datasheet, PDF (1/4 Pages) Advanced Power Technology – POWER MOS V

APT1201R5BVFR
APT1201R5SVFR
1200V 10A 1.500Ω
POWER MOS V^®
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
TO-247
D
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• Popular TO-247 Package
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT1201R5BVFR_SVFR UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
1200
10
40
±30
±40
370
2.96
Volts
Amps
Volts
Watts
W/°C
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
-55 to 150
300
10
30
1300
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 5A)
Zero Gate Voltage Drain Current (V_DS = 1200V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 960V, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 1mA)
MIN TYP MAX UNIT
1200
Volts
1.500 Ohms
250
µA
1000
±100 ^nA
2
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com