APT11N80BC3 Datasheet, PDF (1/5 Pages) Advanced Power Technology – Super Junction MOSFET

APT11N80BC3
800V 11A 0.45Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low R_DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• TO-247 Package
TO-247
D
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT11N80BC3
UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
dv_/dt
I_AR
E_AR
E_AS
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 640V, I_D = 11A, T_J = 125°C)
Repetitive Avalanche Current ⁷
Repetitive Avalanche Energy ⁷
Single Pulse Avalanche Energy ⁴
800
11
33
±20
±30
156
1.25
-55 to 150
260
50
11
0.2
470
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 7.1A)
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V, T_J = 150°C)
Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 680µA)
800
Volts
0.39 0.45 Ohms
0.5
20
µA
200
±100 nA
2.1
3
3.9 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS^™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"