APT11GP60K Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT11G^APTP^11G6^P60^0K_K^SA
APT11GP60SA
600V
POWER MOS 7^® IGBT
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• SSOA rated
(K)
TO-220
GCE
(SA)
D²PAK
C
G
E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT11GP60K_SA
UNIT
V_CES
V_GE
V_GEM
I_C1
I_C2
I_CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 100°C
Pulsed Collector Current ¹ @ T_C = 150°C
Switching Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
41
20
45
45A @ 600V
187
-55 to 150
300
Volts
Amps
Watts
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I _C = 250µA)
Gate Threshold Voltage (V_CE = V_GE, I _C = 1mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 11A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 11A, T_j = 125°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
MIN TYP MAX UNIT
600
3
4.5
6
Volts
2.2 2.7
2.1
250
µA
2500
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com