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| APT11GP60BDQB Datasheet, PDF (1/7 Pages) Advanced Power Technology – POWER MOS 7 IGBT | |||
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TYPICAL PERFORMANCE CURVES
APT11GP60APBT11DGP6Q0BDBQB
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
TO-247
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
⢠Low Conduction Loss
⢠SSOA rated
G
C
C
E
⢠Low Gate Charge
G
⢠Ultrafast Tail Current shutoff
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT11GP60BDQB UNIT
VCES
VGE
Collector-Emitter Voltage
Gate-Emitter Voltage
600
Volts
±20
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
41
20
45
45A @ 600V
187
-55 to 150
300
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 11A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 11A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
600
3
4.5
6
Volts
2.2 2.7
2.1
250
µA
2500
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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