APT11GF120KR Datasheet, PDF (1/2 Pages) Advanced Power Technology – FAST IGBT

APT11GF120KR
1200V 22A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
TO-220
GCE
C
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: T_C = 25°C unless otherwise specified.
APT11GF120KR
UNIT
V_CES
V_CGR
V_EC
V_GE
I _C1
I _C2
I _CM1
I _CM2
E_AS
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Collector-Gate Voltage (R_GE = 20KW)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 25°C
Pulsed Collector Current ¹ @ T_C = 110°C
Single Pulse Avalanche Energy ²
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
1200
15
±20
22
11
44
22
10
125
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_CES
RBV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I_C = 0.4mA)
Collector-Emitter Reverse Breakdown Voltage (V_GE = 0V, I_C = 50mA)
Gate Threshold Voltage (V_CE = V_GE, I_C = 350µA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = I_C2, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = I_C2, T_j = 125°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 25°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 125°C)
Gate-Emitter Leakage Current (V_GE = ±20V, V_CE = 0V)
1200
-15
4.5 5.5 6.5
2.5 3.0
3.1 3.7
0.4
2.0
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
mA
nA
USA
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