APT10090BFLL Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT10090BFLL
APT10090SFLL
1000V 12A 0.900W
POWER MOS 7^{TM FREDFET BFLL}
Power MOS 7^TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7^TM by significantly lowering R_DS(ON)
and Q_g. Power MOS 7^TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D³PAK Package
• FAST RECOVERY BODY DIODE
D³PAK
SFLL
D
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
APT10090
Drain-Source Voltage
L _{Continuous Drain Current @ TC = 25°C}
ICA ^{Pulsed Drain Current 1}
N ^{Gate-Source Voltage Continuous}
H _{Gate-Source Voltage Transient}
EC ^{N Total Power Dissipation @ T}C ^{= 25°C}
T _{IO Linear Derating Factor}
E T _{Operating and Storage Junction Temperature Range}
NC _MA Lead Temperature: 0.063" from Case for 10 Sec.
VA ^{R Avalanche Current 1 (Repetitive and Non-Repetitive)}
D _FO Repetitive Avalanche Energy ¹
A _{IN Single Pulse Avalanche Energy 4}
1000
12
48
±30
±40
300
2.4
-55 to 150
300
12
30
1210
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV_DSS
I_D(on)
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 1mA)
MIN
1000
12
3
TYP
MAX
0.90
250
1000
±100
5
UNIT
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
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