APT10050B2LC Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS VITM is a new generation of low gate charge, high voltage

APT10050B2LC
APT10050LLC
1000V 21A 0.500W
POWER MOS VI^TM
B2LC
Power MOS VI^TM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C_iss and C_rss.
Lower gate charge coupled with Power MOS VI^TM optimized gate layout,
delivers exceptionally fast switching speeds.
T-MAX™
TO-264
LLC
• Identical Specifications: T-MAX™ or TO-264 Package
D
• Lower Gate Charge & Capacitance
• 100% Avalanche Tested
• Easier To Drive
• Faster switching
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
Drain-Source Voltage
AL Continuous Drain Current @ T_C = 25°C
IC Pulsed Drain Current ¹
N _{Gate-Source Voltage Continuous}
CH Gate-Source Voltage Transient
TE ^{N Total Power Dissipation @ TC = 25°C}
D ^{IO Linear Derating Factor}
E ^T _{Operating and Storage Junction Temperature Range}
NC ^{MA Lead Temperature: 0.063" from Case for 10 Sec.}
A ^R Avalanche Current ¹ (Repetitive and Non-Repetitive)
DV ^{FO Repetitive Avalanche Energy 1}
A IN Single Pulse Avalanche Energy ⁴
APT10050
1000
21
84
±30
±40
520
4.16
-55 to 150
300
21
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_DSS
I_D(on)
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
1000
21
3
0.500
25
250
±100
5
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: [phone]
Phone: [phone]
FAX: [phone]
FAX: [phone]