APT1004RKN Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D
TO-220
G
S
APT1004RKN 1000V 3.6A 4.00Ω
APT1004R2KN 1000V 3.5A 4.20Ω
POWER MOS IV^®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT1004R2KN APT1004RKN UNIT
V_DSS Drain-Source Voltage
I_D Continuous Drain Current
I_DM Pulsed Drain Current ¹
V_GS Gate-Source Voltage
P_D Total Power Dissipation @ T_C = 25°C, Derate Above 25°C
T_J,T_STG Operating and Storage Junction Temperature Range
1000
1000
3.5
3.6
14.0
14.4
±30
125
-55 to 150
Volts
Amps
Amps
Volts
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
APT1004RKN
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA) _APT1004R2KN
I_DSS
I_GSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
(V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
I_D(ON)
On State Drain Current ²
(V_DS > I_D(ON) x R_DS(ON) Max, V_GS = 10V)
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 1.0mA)
APT1004RKN
APT1004R2KN
R_DS(ON)
Static Drain-Source On-State Resistance
(V_GS = 10V, I_D = 0.5 I_D [Cont.])
2
APT1004RKN
APT1004R2KN
MIN
1000
1000
3.6
3.5
2
TYP MAX UNIT
250
1000
±100
4
4.00
4.20
Volts
Volts
µA
nA
Amps
Amps
Volts
Ohms
Ohms
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
T_L
Junction to Case
Junction to Ambient
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
MIN TYP MAX UNIT
1.00 °C/W
80 °C/W
300 °C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: [phone]
Phone: [phone]
FAX: [phone]
FAX: [phone]