APT10030L2VR_04 Datasheet, PDF (1/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10030L2VR
1000V 33A 0.300Ω
POWER MOS V^® MOSFET
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
TO-264
Max
• TO-264 MAX Package
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
D
G
S
MAXIMUM RATINGS
Symbol Parameter
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
All Ratings: T_C = 25°C unless otherwise specified.
APT10030L2VR
UNIT
1000
Volts
33
Amps
132
±30
Volts
±40
833
Watts
6.66
W/°C
-55 to 150
°C
300
33
Amps
50
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 16.5A)
Zero Gate Voltage Drain Current (V_DS = 1000V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 800V, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 5mA)
1000
2
Volts
0.300 Ohms
25
µA
250
±100 ^nA
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com