APT1001RBN Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D
G
S
TO-247
APT1001RBN 1000V 11.0A 1.00Ω
POWER MOS IV^®
APT5030BN 500V 21.0A 0.30Ω
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT
1001RBN
UNIT
V_{DSS Drain-Source Voltage}
1000
Volts
I_D
Continuous Drain Current @ T_C = 25°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
11
44
±30
Amps
Volts
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
310
2.48
Watts
W/°C
T_J,T_STG
T_L
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
BV_DSS
Drain-Source Breakdown Voltage
(V_GS = 0V, I_D = 250 µA)
APT1001RBN
I_D(ON)
On State Drain Current ²
(V_DS > I_D(ON) x R_DS(ON) Max, V_GS = 10V)
Drain-Source On-State Resistance ²
R_DS(ON) _{(VGS = 10V, 0.5 ID [Cont.])}
APT1001RBN
APT1001RBN
I_DSS
I_GSS
V_GS(TH)
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 1.0mA)
THERMAL CHARACTERISTICS
MIN
1000
11
2
TYP
MAX UNIT
Volts
Amps
1.00
Ohms
250
1000
±100
4
µA
nA
Volts
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: [phone]
Phone: [phone]
FAX: [phone]
FAX: [phone]