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| APL602B2 Datasheet, PDF (1/4 Pages) Advanced Power Technology – LINEAR MOSFET 600V 49A 0.125Ω | |||
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APL602B2
APL602L
600V 49A 0.125â¦
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
B2
T-MAXâ¢
TO-264
L
⢠Higher FBSOA
⢠Popular T-MAX⢠or TO-264 Package
⢠Higher Power Dissipation
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APL602B2-L
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
600
49
196
±30
±40
730
5.84
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
49
50
3000
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
600
ID(ON) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
49
RDS(ON) Drain-Source On-State Resistance 2 (VGS = 12V, 24.5A)
IDSS
Zero Gate Voltage Drain Current (VDS = 600v, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
Volts
Amps
0.125 Ohms
25
µA
250
±100 nA
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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