APL501J Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D
G
S
APL501J 500V 43.0A 0.12W
ISOTOP^®
POWER MOS IV^®
"UL Recognized" File No. E145592 (S)
SINGLE DIE ISOTOP^® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
V_DSS
I_D
I_DM, l_LM
V_GS
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹ and Inductive Current Clamped
Gate-Source Voltage
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
T_J,T_STG
T_L
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL501J
500
43
172
±30
520
4.16
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250 µA)
500
I_D(ON) On State Drain Current ² (V_DS > I_D(ON) x R_DS(ON) Max, V_GS = 8V)
43
R_DS(ON) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D [Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_{GSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)}
V_GS(TH) _{Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)}
2
0.12
25
250
±100
4
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R_QJC
R_QCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
0.06
MAX
0.24
UNIT
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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