APL1001J Datasheet, PDF (1/2 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D
G
S
APL1001J 1000V 18.0A 0.60W
ISOTOP^®
POWER MOS IV^®
"UL Recognized" File No. E145592 (S)
SINGLE DIE ISOTOP^® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APL1001J
V_{DSS Drain-Source Voltage}
1000
I_D
Continuous Drain Current @ T_C = 25°C
18
I_DM, l_{LM Pulsed Drain Current} ¹ _{and Inductive Current Clamped}
72
PRELIMINARY ^VGS
P_D
T_J,T_STG
T_L
Gate-Source Voltage
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
BV_DSS
I_D(ON)
R_DS(ON)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250 µA)
On State Drain Current ² (V_DS > I_D(ON) x R_DS(ON) Max, V_GS = 8V)
Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D [Cont.])
±30
520
4.16
-55 to 150
300
MIN TYP MAX
1000
18
0.60
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
25
250
I_{GSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)}
±100
V_GS(TH) _{Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)}
2
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R_QJC
R_QCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP MAX
0.24
0.06
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
°C/W
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