AM82223-018 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
Features
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• ∞:1 VSWR CAPABILITY AT RATED CONDITIONS
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 18 W MINIMUM WITH G_P = 6.5 dB GAIN MINIMUM
• COMMON BASE CONFIGURATION
DESCRIPTION:
The AM82223-018 is a common base, silicon NPN bipolar transistor
designed for high gain and efficiency in hi-rel aerospace telemetry
applications in the 2.2-2.3 GHz frequency range.
It incorporates internal input and output impedance matching
structures along with a rugged, emitter-site ballasted overlay die
geometry capable of withstanding ∞:1 load mismatch at any phase
angle under full rated operating conditions..
The AM82223-018 is provided in the industry-standard AMPAC™
metal/ceramic hermetic package.
AM82223-018
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
58.3
3.0
28
200
-65 to +200
3.0
Unit
W
A
V
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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