2N7228 Datasheet, PDF (1/4 Pages) Advanced Power Technology – JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

D
G
S
TO-254
POWER MOS IV^TM
2N7228 500 Volt 0.415Ω
JX2N7228*
JV2N7228*
*QUALIFIED TO MIL-S-19500/592 31/7/92
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
2N7228
UNIT
V_DSS
V_GS
I_D
I_DM
I_AR
P_D
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
Pulsed Drain Current ¹
Avalanche Current ¹
Total Power Dissipation @ T_C = 25°C
Total Power Dissipation @ T_C = 100°C
Linear Derating Factor
500
Volts
±20
12
8
Amps
48
12
150
Watts
60
1.2
W/K
E_AS Single Pulse Avalanche Energy
E_AR Repetitive Avalanche Energy
750
mJ
15
T_J,T_{STG Operating and Storage Junction Temperature Range}
-55 to 150
°C
T_L
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_{DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)}
500
V_GS(TH) _{Gate Threshold Voltage (VDS = VGS, ID = 250µA)}
2
I_DSS
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_{GSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)}
I_D(ON) _{On State Drain Current} ² _{(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)}
12
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 8.0A)
R_DS(ON) Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 8.0A, T_C = 125°C)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 12.0A)
Volts
4
25
µA
250
±100
nA
Amps
0.415
0.900 ^Ohms
0.515
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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