2931-150 Datasheet, PDF (1/4 Pages) Advanced Power Technology – 150 Watts, 38 Volts, 50us, 4% Radar 2900-3100 MHz

2931-150R3
2931-150
150 Watts, 38 Volts, 50µs, 4%
Radar 2900-3100 MHz
Preliminary
GENERAL DESCRIPTION
The 2931-150 is an internally matched, COMMON BASE bipolar transistor
capable of providing 150 Watts of pulsed RF output power at 50µs pulse width,
4% duty factor across the 2900 to 3100 MHz band. The transistor prematch
and test fixture has been optimized through the use of Pulsed Automated
Load Pull. This hermetic ceramic sealed transistor is specifically designed for
S-band radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C¹
500 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
Maximum Temperatures
65 V
3.0 V
15.0 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
P_in
P_g
η_c
R_l
P_d
t_r
VSWR_l
Power Output
Power Input
Power Gain
Collector Efficiency
Return Loss
Pulse Droop
Rise Time
Load Mismatch Tolerance¹
F=2900-3100 MHz
V_cc = 38 Volts
Pulse Width = 50 µs
Duty Factor = 4 %
F = 3100 MHz, P_o = 150W
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
h_FE
θjc¹
NOTE:
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Ic = 120 mA
Vce = 5V, Ic = 600 mA
1. At rated output power and pulse conditions
MIN TYP MAX UNITS
150
W
21.7 W
8.3 8.7
dB
45 50
%
7
dB
0.6
dB
150 nS
2:1
3.0
V
65
V
18 60
0.35 °C/W
Issue 2, April 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.