1517-20M Datasheet, PDF (1/4 Pages) Advanced Power Technology – 20 Watts, 36 Volts, 200us, 10% Radar 1480 to 1650 MHz

1517-20M
20 Watts, 36 Volts, 200µs, 10%
Radar 1480 to 1650 MHz
GENERAL DESCRIPTION
The 1517-20M is an internally matched, COMMON BASE transistor capable of
providing 20 Watts of pulsed RF output power at 200 microseconds pulse width,
10% duty factor across the band 1480 to 1650 MHz. This hermetically solder-
sealed transistor is specifically designed for upper L-Band radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55LV-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C¹
175 W
Maximum Voltage and Current
Collector to Base Voltage (BV_CES)
Emitter to Base Voltage (BV_EBO)
Collector Current (I_C)
70 V
3V
3A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
P_g
η_c
IR_L
Pd
VSWR¹
Power Output
Power Gain
Collector Efficiency
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
TEST CONDITIONS
F = 1480-1650 MHz
Vcc = 36 Volts
Pin = 3.5 W
Pulse Width = 200µs
Duty Factor = 10%
F=1480 MHz, Pin = 3.5W
ELECTRICAL CHARACTERISTICS @ 25°C
I_EBO
BV_CES
h_FE
θjc¹
Emitter cut-off current
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
NOTES: 1. Pulse condition of 200µsec, 10%
V_EB = 3 V
I_C = 15 mA
V_CE = 5V, I_c = 500 mA
MIN
20
7.6
40
9
TYP
25
MAX
30
9.3
0.5
3.0:1
UNITS
W
dB
%
dB
dB
3
mA
65
V
20
1 °C/W
Issue Jan 2006
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120