1517-110M Datasheet, PDF (1/4 Pages) Advanced Power Technology – 110 Watts, 40 Volts, 200us, 10% Radar 1480 to 1650 MHz

1517-110M
110 Watts, 40 Volts, 200µs, 10%
Radar 1480 to 1650 MHz
GENERAL DESCRIPTION
The 1517-110M is an internally matched, COMMON BASE transistor capable
of providing 110 Watts of pulsed RF output power at 200 microseconds pulse
width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically
solder-sealed transistor is specifically designed for upper L-Band radar
applications. It utilizes gold metallization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C¹
350 W
Maximum Voltage and Current
Collector to Base Voltage (BV_CES)
Emitter to Base Voltage (BV_EBO)
Collector Current (I_C)
70 V
3V
9A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
P_g
η_c
IR_L
Pd
VSWR¹
Power Output
Power Gain
Collector Efficiency
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
TEST CONDITIONS
F = 1480-1650 MHz
Vcc = 40 Volts
Pin = 20.5 W
Pulse Width = 200µs
Duty Factor = 10%
F=1480 MHz, Pin = 20.5 W
ELECTRICAL CHARACTERISTICS @ 25°C
I_EBO
BV_CES
h_FE
θjc¹
Emitter cutoff current
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
NOTES: 1. Pulse condition of 200µsec, 10%
V_EB = 3 V
I_C = 40 mA
V_CE = 5V, I_c = 1A
MIN TYP MAX UNITS
110 120 150 W
7.3
8.6 dB
40
%
9
dB
0.5
dB
3:1
10
mA
70
V
20
0.5 °C/W
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Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120