1214-32L.pdf Datasheet, PDF (1/4 Pages) –

1214-32LR5
1214-32L
32 Watts, 36 Volts
Pulsed Radar at 1.2-1.4 GHz
GENERAL DESCRIPTION
The 1214-32L is an internally matched, COMMON BASE transistor capable of
providing 32 Watts of pulsed RF output power at 5 milliseconds pulse width,
20% duty factor across the band 1200 to 1400 MHz. This hermetically solder-
sealed transistor is specifically designed for L-Band radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55AW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C¹
Maximum Voltage and Current
125 W
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
Maximum Temperatures
50 V
3.5 V
5A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
+200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P_out ¹
P_g
η_c
R_L
Pd
VSWR¹
CHARACTERISTICS
Power Output
Power Gain
Collector Efficiency
Return Loss
Pulse Droop
Load Mismatch Tolerance¹
TEST CONDITIONS
F = 1200-1400 MHz
Pin = 5.3 W
Pulse Width = 5 mS
Duty Factor = 20%
F=1200 MHz, Pin=5.3 W
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
h_FE
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 15 mA
Ic = 100 mA
Vce = 5V, Ic = 1A
NOTES: 1. Pulse condition of 5 mS, 20%
Rel 5: March 2005
MIN
32
7.8
42
-9
TYP
45
MAX
41
8.9
0.5
3.0:1
UNITS
W
dB
%
dB
dB
3.5
V
50
V
20
1.4 _°C/W
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE
CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120