1214-150L.pdf Datasheet, PDF (1/4 Pages) –

1214-150lR2
1214-150L
150 Watts, 36 Volts, 5 ms, 20%
Radar 1200 to 1400 MHz
GENERAL DESCRIPTION
The 1214-150L is an internally matched, COMMON BASE transistor capable
of providing 150 Watts of pulsed RF output power at 5 milliseconds pulse
width, 20% duty factor across the band 1200 to 1400 MHz. This hermetically
solder-sealed transistor is specifically designed for L-Band radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55ST-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C¹
320 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
70 V
3.5 V
15 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature
+200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
P_g
η_c
R_L
Pd
VSWR¹
Power Output
Power Gain
Collector Efficiency
Return Loss
Pulse Droop
Load Mismatch Tolerance
TEST CONDITIONS
F = 1200-1400 MHz
Vcc = 36 Volts
Pin = 27 W
Pulse Width = 5 mS
Duty Factor = 20%
F=1200 MHz, Pin = 27W
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
Emitter to Base Breakdown
BV_ces
Collector to Emitter Breakdown
h_FE
DC – Current Gain
θjc¹
Thermal Resistance
NOTES: 1. Pulse condition of 5 mS, 20%
I_e = 50 mA
I_c = 100 mA
V_ce = 5V, I_c = 1A
MIN TYP MAX UNITS
140 150 200
W
7.15
8.7
dB
45
%
-9
dB
0.5
dB
3.0:1
3.0
V
65
V
20 55
0.55 _°C/W
April 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120