1011LD110 Datasheet, PDF (1/4 Pages) Advanced Power Technology – 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET

1011LD110
110 Watts, 32 Volts
Pulsed Avionics 1030 to 1090 MHz
LDMOS FET
GENERAL DESCRIPTION
The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode
lateral MOSFET capable of providing 110 W_pk of RF power from 1030 to 1090
MHz. The device is nitride passivated and utilizes gold metallization to ensure
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55QZ-1
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P_d)
Voltage and Current
Drain-Source (V_DSS)
Gate-Source (V_GS)
Temperatures
Storage Temperature
Operating Junction Temperature
300 W
75V
± 20V
-65 to +150°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
BV_dss
I_dss
I_gss
V_gs(th)
V_ds(on)
g_FS
θ_JC1
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Thermal Resistance
V_gs = 0V, I_d = 10mA
V_ds = 32V, V_gs= 0V
V_gs = 10V, V_ds = 0V
V_ds = 10V, I_d = 20 mA
V_gs = 10V, I_d = 1A
V_ds = 10V, I_d = 1A
MIN TYP MAX UNITS
75
V
5
µA
1
µA
3
6
V
0.3
V
1
S
0.6° ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 32V, I_dq = 250mA
G_PS
Common Source Power Gain Pulse width = 32 µs, LTDC=2% 13 15
dB
Pd
Pulse Droop
F=1030/1090 MHz, P_out = 110W
0.5 dB
η_d
Drain Efficiency
F = 1030 MHz, P_out = 110W
45 50
%
ψ
Load Mismatch
F = 1090 MHz, P_out = 110W
3:1
NOTES: 1. At rated output power and pulse conditions
2. Pulse Format 1: 32µs, 2% Long Term Duty Factor
Rev. B - Apr 2004
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.