ADG611 Datasheet, PDF (7/12 Pages) Analog Devices – 1 pC Chanrge Injection, 100 pA Leakage, CMOS +-5 V/+5 V/+3 V Quad SPST Switches

Typical Performance Characteristics–ADG611/ADG612/ADG613
250
T_A = 25؇C
200
؎3.3V
150
؎4.5V
؎2.7V ^؎3V
100
50
؎5.5V
؎5V
0
–5 –4 –3 –2 –1 0 1 2 3 4 5
V_D, V_S – V
TPC 1. On Resistance vs. V_D(V_S),
Dual Supply
600
T_A = 25؇C
V_SS = 0V
500
400
300
200
V_DD = 2.7V
V_DD = 3V
V_DD = 3.3V
V_DD = 4.5V
100
V_DD = 5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_D, V_S – V
TPC 2. On Resistance vs. V_D(V_S),
Single Supply
250
V_DD = +5V
V_SS = –5V
200
150
+125؇C
+85؇C
100
+25؇C
50
–40؇C
0
–5 –4 –3 –2 –1 0 1 2 3 4 5
V_D, V_S – V
TPC 3. On Resistance vs. V_D(V_S) for
Different Temperatures, Dual Supply
600
V_DD = 5V
V_SS = 0V
500
400
300
+125؇C
200
+85؇C
100
0
0
–40؇C
+25؇C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_D, V_S – V
TPC 4. On Resistance vs. V_D(V_S)
for Different Temperatures,
Single Supply
2
I_S (OFF)
1
0
–1
I_D (OFF)
–2
–3
I_S, I_D(ON)
–4
–5 V_DD = +5V
V_SS = –5V
–6
0 20 40 60 80 100 120
TEMPERATURE – ؇C
TPC 5. Leakage Currents vs.
Temperature, Dual Supply
2
I_S (OFF)
1
0
–1
I_D (OFF)
–2
I_S, I_D(ON)
–3
–4
–5 VDD = 5V
V_SS = 0V
–6
0 20 40 60 80 100 120
TEMPERATURE – ؇C
TPC 6. Leakage Currents vs.
Temperature, Single Supply
2.0
T_A = 25؇C
1.5
V_DD = +3V
V_SS = 0V
1.0
0.5
V_DD = +5V
V_SS = 0V
0
–0.5
–1.0
V_DD = +5V
V_SS = –5V
–1.5
–2.0
–5 –4 –3 –2 –1 0 1 2 3 4 5
V_S – V
TPC 7. Charge Injection vs.
Source Voltage
120
100
t_ON,V _DD = +5V
V_SS = 0V
80
60
t_ON,V _DD = +5V
V_SS = –5V
40
20
0
–40 –20
t_OFF,V _DD = +5V
V_SS = 0V
t_OFF,V _DD = +5V
V_SS = –5V
0 20 40 60 80 100 120
TEMPERATURE – ؇C
TPC 8. t_ON/t_OFF Times vs.
Temperature
0
–2
–4
–6
–8
–10
–12
–14
–16
–18
0.3
V_DD = –5V
V_SS = +5V
V_DD = 5V
V_SS = 0V
T_A = 25؇C
1
10
100
FREQUENCY – MHz
1000
TPC 9. On Response vs. Frequency
REV. 0
–7–