HMC574AMS8E Datasheet, PDF (6/6 Pages) Analog Devices – GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

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HMC574AMS8E
GaAs MMIC 5 WATT T/R SWITCH
DC - 3 GHz
Typical Application Circuit
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic
to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with
Vdd of +3 to +8 Volts applied to the CMOS logic gates and to pin 4 of
the RF switch.
3. DC Blocking capacitors are required for each RF port as shown.
Capacitor value determines lowest frequency of operation.
4. Highest RF signal power capability is achieved with Vdd set to +8V.
The switch will operate properly (but at lower RF power capability)
at bias voltages down to +3V.
Evaluation Circuit Board
List of Materials for
Evaluation PCB
EV1HMC574AMS8 ^[1]
Item
Description
J1 - J3
PCB Mount SMA RF Connector
J4 - J7
DC Pin
C1 - C3
100 pF capacitor, 0402 Pkg.
C4
10,000 pF capacitor, 0603 Pkg.
R1, R2
100 Ohm resistor, 0402 Pkg.
U1
HMC574AMS8E T/R Switch
PCB ^[2]
104122 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the application should
be generated with proper RF circuit design tech-
niques. Signal lines at the RF port should have 50
Ohm impedance and the package ground leads
and package bottom should be connected directly
to the ground plane similar to that shown above.
The evaluation circuit board shown above is avail-
able from Analog Devices Inc upon request.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: [phone] • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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