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ADF4356 Datasheet, PDF (6/35 Pages) Analog Devices – 6.8 GHz Wideband Synthesizer with Integrated VCO
ADF4356
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VRF, DVDD, AVDD to GND1
AVDD to DVDD
VP, VVCO to GND1
CPOUT to GND1
Digital Input/Output Voltage to GND1
Analog Input/Output Voltage to GND1
REFINA, REFINB to GND1
REFINA to REFINB
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Electrostatic Discharge (ESD)
Charged Device Model
Human Body Model
Rating
−0.3 V to +3.6 V
−0.3 V to +0.3 V
−0.3 V to +5.8 V
−0.3 V to VP + 0.3 V
−0.3 V to DVDD + 0.3 V
−0.3 V to AVDD + 0.3 V
−0.3 V to AVDD + 0.3 V
±2.1 V
−40°C to +85°C
−65°C to +125°C
150°C
260°C
40 sec
1000 V
2000 V
1 GND = AGND = SDGND = AGNDRF = AGNDVCO = CPGND = 0 V.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
The ADF4356 is a high performance RF integrated circuit with
an ESD rating of 2 kV and is ESD sensitive. Take proper
precautions for handling and assembly.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 4. Thermal Resistance
Package Type
θJA
CP-32-121
27.3
Unit
°C/W
1 Test Condition 1: thermal impedance simulated values are based on use of a
PCB with the thermal impedance paddle soldered to GND1.
TRANSISTOR COUNT
The transistor count for the ADF4356 is 134,486 (CMOS) and
3874 (bipolar).
ESD CAUTION
Rev. 0 | Page 6 of 35