5962-88565022A Datasheet, PDF (6/13 Pages) Analog Devices – MICROCIRCUIT, LINEAR, RADIATION HARDENED, LOW NOISE, QUAD OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON

TABLE I. Electrical performance characteristics – Continued.
Test
Large-signal voltage gain
Output voltage swing
Supply current 4/
Slew rate
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤+125°C
unless otherwise specified
Group A
subgroups
AVS
VO = ±10 V,
4
RL = 2 kΩ 3/
5, 6
VOP
RL = 2 kΩ 3/
IS
No load
4, 5, 6
1, 2, 3
M,D,P,L,R
1
SR
AVCL = +21, RL = 10 kΩ,
7
TA = +25°C 3/
Common-mode rejection
CMR
VCM = IVR = ±11 V 3/ 5/
1
2, 3
1
2, 3
Power supply rejection ratio PSRR V_CC = ±4.5 V to ±18 V 3/
1
2, 3
1
2, 3
Device
type
02
Limits
Min Max
350
250
All ±12
All
11
11
01 1.4
02 6.5
01 110
100
02 105
100
01
1.8
5.6
02
5.6
10
Unit
V/mV
V
mA
V/µs
dB
µV/V
1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. However, this
device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in table I.
When performing post irradiation electrical measurements for any RHA level, TA = +25°C. VCC = ±15 V, RS = 50 Ω.
2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method
1019, condition A.
3/ This parameter is not tested post-irradiation.
4/ IS limit equals the total of all amplifiers.
5/ IVR is defined as the VCM range used for the CMR test.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
F
5962-88565
SHEET
6