AD825_04 Datasheet, PDF (5/12 Pages) Analog Devices – Low Cost, General-Purpose High Speed JFET Amplifier

ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Internal Power Dissipation¹
Small Outline (R)
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range (R, R-16)
Operating Temperature Range
Lead Temperature Range
(Soldering 10 sec)
Rating
±18 V
See Figure 6
±VS
±VS
See Figure 6
−65°C to +125°C
−40°C to +85°C
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1 _{Specification is for device in free air:}
8-lead SOIC package: θJA = 155°C/W
16-lead SOIC package: θJA = 85°C/W
AD825
PIN CONFIGURATIONS
NC 1
8 NC
–IN 2 ^AD825 7 +V_S
+IN
3
TOP VIEW
(Not to Scale)
6
OUTPUT
–V_S 4
5 NC
NC = NO CONNECT
Figure 4. 8-Lead SOIC
NC 1
16 NC
NC 2
15 NC
NC 3
14 NC
–INPUT 4 AD825 13 +V_S
TOP VIEW
+INPUT 5 _{(Not to Scale)} 12 OUTPUT
–V_S 6
11 NC
NC 7
10 NC
NC 8
9 NC
NC = NO CONNECT
Figure 5. 16-Lead SOIC
2.5
T_J = 150°C
2.0
16-LEAD SOIC PACKAGE
1.5
1.0
0.5
8-LEAD SOIC PACKAGE
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (°C)
Figure 6. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. F | Page 5 of 12