OP292_15 Datasheet, PDF (4/20 Pages) Analog Devices – Dual/Quad Single-Supply Operational Amplifiers

OP292/OP492
Parameter
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
Channel Separation
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol
SR
GBP
φm
CS
en p-p
en
in
Conditions
RL = 10 kΩ
−40°C ≤ TA ≤ +125°C
fO = 1 kHz
0.1 Hz to 10 Hz
f = 1 kHz
Min Typ Max
3
1
2
4
75
100
25
15
0.7
1 _{Long-term offset voltage drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 125°C with LTPD of 1.3.}
Unit
V/μs
V/μs
MHz
Degrees
dB
μV p-p
nV/√Hz
pA/√Hz
VS =±15 V, VCM = 0 V, VO = 2 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
OP292
OP492
Input Bias Current
Input Offset Current
Input Voltage Range¹
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing
Short-Circuit Current Limit
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current Per Amp
Symbol
VOS
VOS
IB
IOS
CMRR
AVO
ΔVOS/ΔT
ΔIB/ΔT
VO
ISC
PSRR
ISY
Conditions
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
VCM = ±11 V
−40°C ≤ TA ≤ +125°C
RL = 10 kΩ, VO =±10 V
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
RL = 2 kΩ to GND
−40°C ≤ TA ≤ +125°C
RL = 100 kΩ to GND
−40°C ≤ TA ≤ +125°C
Short circuit to GND
VS = ±2.25 V to ±15 V
−40°C ≤ TA ≤ +125°C
VO = 0 V
Min
Typ
Max Unit
1.0
1.2
1.5
1.4
1.7
2
375
0.5
7
20
0.4
−11
78
100
75
95
25
120
10
75
5
60
4
3
2.0
mV
2.5
mV
3
mV
2.5
mV
2.8
mV
3
mV
700 nA
1
μA
50
nA
100 nA
1.2
μA
+11 V
dB
dB
V/mV
V/mV
V/mV
10
μV/°C
pA/°C
±11
±12.2
V
±10
±11
V
±13.8 ±14.3
V
±13.5 ±14.0
mV
8
10.5
mA
75
86
dB
70
83
dB
1
1.4
mA
Rev. C | Page 4 of 20