AMP02_15 Datasheet, PDF (4/12 Pages) Analog Devices – High Accuracy Instrumentation Amplifier

AMP02
8
1. RG₁
2. –IN
3. +IN
4. V–
5. REFERENCE
6. OUT
7. V+
8. RG₂
9. SENSE
CONNECT SUBSTRATE TO V–
1
DIE SIZE 0.103 inch ؋ 0.116 inch, 11,948 sq. mils
(2.62 mm ؋ 2.95 mm, 7.73 sq. mm)
NOTE: PINS 1 and 8 are KELVIN CONNECTED
Die Characteristics
WAFER TEST LIMITS* (@ V_S = ؎15 V, V_CM = 0 V, T_A = 25؇C, unless otherwise noted.)
Parameter
Input Offset Voltage
Output Offset Voltage
Power Supply
Rejection
Symbol
V_IOS
V_OOS
PSR
Conditions
V_S = ± 4.8 V to ± 18 V
G = 1000
G = 100
G = 10
G=1
AMP02 GBC
Limits
200
8
110
110
95
75
Unit
µV max
mV max
dB
Input Bias Current
I_B
20
nA max
Input Offset Current
Input Voltage Range
I_OS
10
IVR
Guaranteed by CMR Tests
± 11
nA max
V min
V_CM = ± 11 V
G = 1000
110
Common-Mode
CMR
G = 100
110
dB
Rejection
G = 10
95
G=1
75
Gain Equation Accuracy
G = ^{50 kΩ} + 1, G = 1000
0.7
R_G
Output Voltage Swing
V_OUT
R_L = 1 kΩ
± 12
% max
V min
Supply Current
I_SY
6
mA max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
–4–
REV. E