ADG1204 Datasheet, PDF (4/16 Pages) Analog Devices – 2 pF Off Capacitance, 1 pC Charge Injection, +-15 V/12 V 4:1 iCMOS Multiplexer

ADG1204
Parameter
IGND
IGND
25°C
0.001
150
85°C
1 _{Y Version temperature range is −40°C to +125°C.}
2 _{Guaranteed by design, not subject to production test.}
Preliminary Technical Data
Y Version¹
5.0
300
Unit
µA typ
µA max
µA typ
µA max
Test Conditions/Comments
Digital Inputs = 0 V or VDD
Digital Inputs = 5 V
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
25°C
220
85°C
Y Version¹
VSS to VDD
On Resistance Match between
10
Channels (∆RON)
On Resistance Flatness (RFLAT(ON))
30
LEAKAGE CURRENTS
Source Off Leakage, IS (Off)
±0.01
±0.5
±1
±5
Drain Off Leakage, ID (Off)
±0.01
±0.5
±1
±5
Channel On Leakage, ID, IS (On)
±0.04
±1
±2
±5
DIGITAL INPUTS
Input High Voltage, VINH
2.0
Input Low Voltage, VINL
0.8
Input Current, IINL or IINH
0.005
±0.5
Digital Input Capacitance, CIN
5
DYNAMIC CHARACTERISTICS²
tON
160
tOFF
60
Break-before-Make Time Delay, tD 50
1
Charge Injection
20
Off Isolation
56
Channel-to-Channel Crosstalk
60
−3 dB Bandwidth
20
CS (Off)
15
CD (Off)
CD, CS (On)
100
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
Test Conditions/Comments
VS = ±3.3 V, IS = −10 mA; Figure 21
VS = ±3.3 V, IS = −10 mA
VS = ±3.3 V, IS = −10 mA
VDD = 5.5 V, VSS = −5.5 V
VD = ±4.5 V, VS = ±4.5 V; Figure 22
VD = ±4.5 V, VS = ±4.5 V; Figure 22
VD = VS = ±4.5 V; Figure 23
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 3 V; Figure 24
RL = 300 Ω, CL = 35 pF
VS = 3 V; Figure 24
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 3 V; Figure 25
VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 26
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 27
RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 28
RL = 50 Ω, CL = 5 pF; Figure 29
f = 1 MHz
f = 1 MHz
f = 1 MHz
Rev. PrD | Page 4 of 16