AD8290_16 Datasheet, PDF (4/21 Pages) Analog Devices – G = 50, CMOS Sensor Amplifier with Current Excitation

AD8290
SPECIFICATIONS
VCC = 2.6 V to 5.0 V, TA = 25°C, CFILTER = 6.8 nF, output antialiasing capacitor = 68 nF, RSET = 3 kΩ, common-mode input = 0.6 V, unless
otherwise noted.
Table 1.
Parameter
COMMON-MODE REJECTION RATIO (CMRR)
CMRR DC
NOISE
Amplifier and VREF
VOLTAGE OFFSET
Output Offset
Output Offset TC
PSR
INPUT CURRENT
Input Bias Current
Input Offset Current
DYNAMIC RESPONSE
Small Signal Bandwidth –3 dB
GAIN
Gain
Gain Error
Gain Nonlinearity
Gain Drift
INPUT
Differential Input Impedance
Input Voltage Range
OUTPUT
Output Voltage Range
Output Series Resistance
CURRENT EXCITATION
Excitation Current Range
Excitation Current Accuracy
Excitation Current Drift
External Resistor for Setting
Excitation Current (RSET)
Excitation Current Power
Supply Rejection
Excitation Current Pin Voltage
Excitation Current Output Resistance
Required Capacitor from Ground to
Excitation Current Pin (CBRIDGE)
ENABLE
ENBL High Level
ENBL Low Level
Start-Up Time for ENBL
Test Conditions
Input voltage (VINP − VINN)
range of 0.2 V to VCC − 1.7 V
Input referred, f = 0.1 Hz to 10 Hz
Reference is internal and set to
900 mV nominal
−40°C < TA < +85°C
With external filter capacitors,
CFILTER = 6.8 nF and output
antialiasing capacitor = 68 nF
−40°C < TA < +85°C
VOUT = Gain × (VINP − VINN) +
Output Offset
Excitation current = 0.9 V/RSET
−40°C < TA < +85°C
VCC < 2.9 V
VCC > 2.9 V
Min
Typ
110
120
0.75
865
900
−300 ±50
120
−1000
−2000
±100
±200
0.25
−1.0
−25
0.2
0.075
300
−1.0
−250
692
−2.0
0
50
±0.5
±0.0075
±15
50||1
10 ± 20%
±50
+0.2
100
0.1
VCC − 0.5
2.4
GND
5.0
Max
935
+300
+1000
+2000
Unit
dB
μV p-p
mV
μV/°C
dB
pA
pA
kHz
+1.0
+25
VCC − 1.7
VCC − 0.075
1300
+1.0
+250
3000
+2.0
VCC − 1.0
VCC
VCC
0.8
V/V
%
%
ppm/°C
MΩ||pF
V
V
kΩ
μA
%
ppm/°C
Ω
μA/V
V
MΩ
μF
V
V
V
ms
Rev. B | Page 3 of 20