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OP183 Datasheet, PDF (3/12 Pages) Analog Devices – 5 MHz Single-Supply Operational Amplifiers
OP183/OP283
ELECTRICAL CHARACTERISTICS (@ VS = ؎15.0 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
VOS
Input Bias Current
IB
Input Offset Current
IOS
Input Voltage Range
Common-Mode Rejection Ratio CMRR
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Long Term Offset Voltage
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short-Circuit Limit
AVO
∆VOS/∆T
∆IB/∆T
VOS
VOH
VOL
ISC
Open -Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
ZOUT
PSRR
Supply Current/Amplifier
Supply Voltage Range
DYNAMIC PERFORMANCE
Slew Rate
Full-Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
ISY
VS
SR
BWp
tS
GBP
φm
–40°C ≤ TA ≤ +85°C
–40°C ≤ TA ≤ +85°C
–40 ≤ TA ≤ +85°C
VCM = –15 V to +13.5 V,
–40°C ≤ TA ≤ +85°C
RL = 2 kΩ
Note 1
0.01
300
400
11
–15
70 86
100 1000
3
–1.6
1.0
1.25
600
750
± 50
+13.5
1.5
mV
mV
nA
nA
nA
V
dB
V/mV
µV/°C
nA/°C
mV
RL = 2 kΩ to GND, –40°C ≤ TA ≤ +85°C +13.9 14.1
V
RL = 2 kΩ to GND, –40°C ≤ TA ≤ +85°C
–14.05 –13.9
V
Source
30
mA
Sink
50
mA
f = 1 MHz, AV = +1
15
Ω
VS = ± 2.5 V to ± 18 V,
–40°C ≤ TA ≤ +85°C
VS = ± 18 V, VO = 0 V,
–40°C ≤ TA ≤ +85°C
70 112
dB
1.2
1.75
mA
+3
± 18
V
RL = 2 kΩ
1% Distortion
To 0.01%
10 15
50
1.5
5
56
V/µs
kHz
µs
MHz
degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
2
Voltage Noise Density
en
f = 1 kHz
10
Current Noise Density
in
0.4
NOTES
1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
µV p-p
nV/√Hz
pA/√Hz
WAFER TEST LIMITS (@ VS = +5.0 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
Input Bias Current
Input Offset Current
Common-Mode Rejection
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage High
Output Voltage Low
Supply Current/Amplifier
VOS
IB
IOS
CMRR
PSRR
AVO
VOH
VOL
ISY
VS = ± 15 V, VO = 0 V
VCM = 2.5 V
VCM = 2.5 V
VCM = 0 V to 3.5 V
V = ± 2.5 V to ± 18 V
RL = 2 kΩ, 0.2 ≤ VO ≤ 3.8 V
RL = 2 kΩ
RL = 2 kΩ
VS = ± 15 V, VO = 0 V, RL = ∞
1.0
± 600
± 50
70
70
100
4.0
75
1.5
mV max
nA max
nA max
dB min
dB min
V/mV min
V min
mV max
mA max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
REV.B
–3–