MAT01_15 Datasheet, PDF (3/12 Pages) Analog Devices – Matched Monolithic Dual Transistor

Data Sheet
MAT01
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VCB = 15 V, IC = 10 µA, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
VOLTAGE
Breakdown Voltage
Offset Voltage
Offset Voltage Stability
First Month¹
Long Term²
CURRENT
Offset Current
Bias Current
Current Gain
Current Gain Match
NOISE
Low Frequency Noise Voltage
Broadband Noise Voltage
Noise Voltage Density
OFFSET VOLTAGE/CURRENT
Offset Voltage Change
Offset Current Change
LEAKAGE
Collector to Base Leakage Current
Collector to Emitter Leakage Current
Collector to Collector Leakage Current
SATURATION
Collector Saturation Voltage
GAIN BANDWIDTH PRODUCT
CAPACITANCE
Output Capacitance
Collector to Collector Capacitance
Symbol Test Conditions/Comments
BVCEO
VOS
IC = 100 µA
VOS/Time
IOS
IB
hFE
IC = 10 nA
IC = 10 µA
IC = 10 mA
∆hFE
IC = 10 µA
100 nA ≤ IC ≤ 10 mA
en p-p
en rms
en
0.1 Hz to 10 Hz³
1 Hz to 10 kHz
fO = 10 Hz³
fO = 100 Hz³
fO = 1000 Hz³
∆VOS/∆VCB 0 ≤ VCB ≤ 30 V
∆IOS/∆VCB 0 ≤ VCB ≤ 30 V
ICBO
VCB = 30 V, IE = 0⁴
ICES
VCE = 30 V, VBE = 0^{4, 5}
ICC
VCC = 30 V⁵
VCE(SAT)
fT
IB = 0.1 mA, IC = 1 mA
IB = 1 mA, IC = 10 mA
VCE = 10 V, IC = 10 mA
COB
VCB = 15 V, IE = 0
CCC
VCC = 0
MAT01AH
MAT01GH
Min Typ Max Min Typ Min Unit
45
45
V
0.04 0.1
0.10 0.5 mV
2.0
2.0
µV/Mo
0.2
0.2
µV/Mo
0.1 0.6
0.2 3.2 nA
13 20
18 40 nA
590
430
500 770
250 560
840
610
0.7 3.0
1.0 8.0 %
0.8
1.2
%
0.23 0.4
0.60
7.0 9.0
6.1 7.6
6.0 7.5
0.23 0.4
0.60
7.0 9.0
6.1 7.6
6.0 7.5
µV p-p
µV rms
nV/√Hz
nV/√Hz
nV/√Hz
0.5 3.0
2 15
0.8 8.0 µV/V
3 70 pA/V
15 50
50 200
20 200
25 200 pA
90 400 pA
30 400 pA
0.12 0.20
0.8
450
0.12 0.25 V
0.8
V
450
MHz
2.8
2.8
pF
8.5
8.5
pF
1 _{Exclude first hour of operation to allow for stabilization.}
2 _{Parameter describes long-term average drift after first month of operation.}
3 _{Sample tested.}
4 _{The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a}
potential that is lower than either collector voltage.
5 _{ICC and ICES are guaranteed by measurement of ICBO.}
Rev. D | Page 3 of 12