BUF03EJ Datasheet, PDF (3/7 Pages) Analog Devices – High-Speed Voltage Follwer/Buffer

ANALOGDEVICESfAX-ON-DEMANDHOTLINE - Page ~
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BUF-O3
ELECTRICAL CHARACTERISTICS
PARAMETER
Slew Rate
Input Olfset Voltage
AverageInputOffset
Voltage DrIft
Inp!-!,lBlasCurrent
Vollage Gain
Gain DriftwithTemperature
Power Supply Rejection Ratio
SupplyCurrent
SYMBOL
SR
Vas
TCVos
18
Avo
PSRR
ISY
at Vs =:!: 15V,-55°C:<; TA'5 +125°C, TA = Tj, unless otherwise noted. (Note 1)
CONDITIONS
RL 21<11C, L = SOpF
Rs 2k!1
As:S 2k!l. (Note 2)
TA=+12S"C
RL 2kll. VIN=il0V
Vs:7Vto;!:15V
TA=+12SDC
BUF-O3A
MIN TYP MAX
- ₂₂₀ ...
_.
6
20
- 50 100
-
25 75
0.0020 0.0055
--
-
5
-
.-. _{0.15 1.26}
- _{18 24}
.^BUF-O3B
MIN TYP MAX
220 ^-
-
10
35
-
90 170
-
30
90
0.9902 0.9942
-
-
8^-
- _{0.20 2.24}
- _{18 24}
UNITS
VII's
m. V..
p.v;oC
nA
VIV
ppml"C
mV_-I_.V
mA
ELECTRICAL CHARACTERISTICS = at Vs :!:1SV. 0° C ~ TA~ + 70° C, TA "" Ti' unless otherwise noted.
PARAMETER
- - - Slew Rate
SYMBOL
SR
CONDITIONS
RL;::2kO
= ^- _-I'-n"put ^{Olfs.e..t.-V--o--l-t-a-~--e.-----..}
OAvera~e Input Offsel
- _{Voltage Drift}
B _{- Input Bias Current}
Vas
TCVes
.""-"--"""-'---".-"-'-.
18
Rs'; 2k{l. CL 50pF
Rs:S2kl1.\Note2j
...
TA=+70.C
S Voltage Gain (V1N~'1:10VI
Avo
RL'" 2k.f!
O ^{- Gain Drift with Te"m"""p""e""r-a--t"u' re}
Power SuPPly Rej"e"c"t"i-o-n-"'...Ratio
'-.'. .
PSRA
VS=-:!7VIOI15Y
L _{Supply Current}
'Sy
TA"'+70'C
E ^NOTES;
1. In order 10operate the device at an ambienltemperatureot+ 125DC,more
T extensive heat sinking must be used to ensure that the chip temperature
E ^{never exceeds Ihe absolute maximumot +175' C.The chip temperature of}
BUF-O3E
MIN TYP MAX
240
4
14
40 90
1.5
5
0.9935 0.9958 ^-
5-
0.12
1
19 25
BUF-O3F
IIIIN TYP MAX
240
7 28
50 150
1.8 8
0.9918 0.0046 -
-
8
- _{0.16 1.78}
-
19 25
UNITS
VII's
mV
pYfDC
nA
V/V
ppml"C
mVIV
mA
+165.C Is achieved by reducing tl1ecase-to-ambient thermal resistance
to 30'CIW ie.g.. Thermalloy 2227).
2. Guaranteed by deeign.
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