ADR550_15 Datasheet, PDF (3/16 Pages) Analog Devices – High Precision Shunt Mode Voltage References

ADR520/ADR525/ADR530/ADR540/ADR550
SPECIFICATIONS
ADR520 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Output Voltage
Grade A
Grade B
Initial Accuracy
Grade A
Grade B
Temperature Coefficient¹
Grade A
Grade B
Output Voltage Change vs. IIN
Dynamic Output Impedance
Minimum Operating Current
Voltage Noise
Turn-On Settling Time
Output Voltage Hysteresis
Symbol
VOUT
VOERR
TCVO
∆VR
(∆VR/∆IR)
IIN
eN p-p
tR
∆VOUT_HYS
Conditions
±0.4%
±0.2%
−40°C < TA < +85°C
IIN = 0.1 mA to 15 mA
−40°C < TA < +85°C
IIN = 1 mA to 15 mA
−40°C < TA < +85°C
IIN = 0.1 mA to 15 mA
−40°C < TA < +85°C
0.1 Hz to 10 Hz
IIN = 1 mA
1 _{Guaranteed by design; not production tested.}
Min
2.040
2.044
−8
−4
50
Typ
2.048
2.048
25
15
14
2
40
Max
2.056
2.052
+8
+4
70
40
1
4
2
0.27
Unit
V
V
mV
mV
ppm/°C
ppm/°C
mV
mV
mV
Ω
μA
μV p-p
μs
ppm
ADR525 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Output Voltage
Grade A
Grade B
Initial Accuracy
Grade A
Grade B
Temperature Coefficient¹
Grade A
Grade B
Output Voltage Change vs. IIN
Dynamic Output Impedance
Minimum Operating Current
Voltage Noise
Turn-On Settling Time
Output Voltage Hysteresis
Symbol
VOUT
VOERR
TCVO
∆VR
(∆VR/∆IR)
IIN
eN p-p
tR
∆VOUT_HYS
Conditions
±0.4%
±0.2%
−40°C < TA < +85°C
IIN = 0.1 mA to 15 mA
−40°C < TA < +85°C
IIN = 1 mA to 15 mA
−40°C < TA < +85°C
IIN = 0.1 mA to 15 mA
−40°C < TA < +85°C
0.1 Hz to 10 Hz
IIN = 1 mA
1 _{Guaranteed by design; not production tested.}
Min
2.490
2.495
−10
−5
50
Typ
2.500
2.500
25
15
18
2
40
Max
2.510
2.505
+10
+5
70
40
1
4
2
0.2
Unit
V
V
mV
mV
ppm/°C
ppm/°C
mV
mV
mV
Ω
μA
μV p-p
μs
ppm
Rev. E | Page 3 of 16