ADG819BRMZ Datasheet, PDF (3/16 Pages) Analog Devices – 0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

Data Sheet
ADG819
SPECIFICATIONS
V_DD = 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, R_ON1
On Resistance Match Between
Channels, ΔR_ON1
On
Resistance
Flatness,
R1
FLAT(ON)
LEAKAGE CURRENTS
Source Off Leakage, I_S (Off)
Channel On Leakage, I_D, I_S (On)
DIGITAL INPUTS
Input High Voltage, V_INH
Input Low Voltage, V_INL
Input Current
I_INL or I_INH
25°C
0.5
0.6
0.06
0.08
0.1
0.17
±0.01
±0.25
±0.01
±0.25
0.005
−40°C to
+85°C
0.7
0.1
0.2
±3
±3
Digital Input Capacitance, C_IN
5
DYNAMIC CHARACTERISTICS²
t_ON
35
45
50
t_OFF
10
16
18
Break-Before-Make Time Delay, 5
t_BBM
Charge Injection
20
Off Isolation
–71
Channel-to-Channel Crosstalk –72
Bandwidth, –3 dB
17
C_S (Off)
80
C_D, C_S (On)
300
POWER REQUIREMENTS
I_DD
0.001
1.0
1 _{On resistance parameters tested with IS = 10 mA.}
2 _{Guaranteed by design; not subject to production test.}
–40°C to
+125°C
0 V to V_DD
0.8
0.12
0.25
±10
±25
2.0
0.8
±0.1
55
21
1
2.0
Unit
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V_S = 0 V to V_DD, I_S = 100 mA; see Figure 16
V_S = 0 V to V_DD, I_S = 100 mA
V_S = 0 V to V_DD, I_S = 100 mA
V_DD = 5.5 V
V_S = 4.5 V/1 V, V_D = 1 V/4.5 V; see Figure 17
V_S = V_D = 1 V, or V_S = V_D = 4.5 V; see Figure 18
V min
V max
μA typ
μA max
pF typ
V_IN = V_INL or V_INH
ns typ
ns max
ns typ
ns max
ns typ
R_L = 50 Ω, C_L = 35 pF, V_S = 3 V; see Figure 19
R_L = 50 Ω, C_L = 35 pF, V_S = 3 V; see Figure 19
R_L = 50 Ω, C_L = 35 pF, V_S1 = V_S2 = 3 V; see Figure 20
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
μA typ
μA max
V_S = 2.5 V, R_S = 0 Ω, C_L = 1 nF; see Figure 21
R_L = 50 Ω, C_L = 5 pF, f = 100 kHz; see Figure 22
R_L = 50 Ω, C_L = 5 pF, f = 100 kHz; see Figure 24
R_L = 50 Ω, C_L = 5 pF; see Figure 23
f = 1 MHz
f = 1 MHz
V_DD = 5.5 V, digital inputs = 0 V or 5.5 V
Rev. A | Page 3 of 16