ADG409_15 Datasheet, PDF (3/16 Pages) Analog Devices – LC MOS 4-/8-Channel High Performance Analog Multiplexers

ADG408/ADG409
SPECIFICATIONS
DUAL SUPPLY
VDD = 15 V, VSS = −15 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
B Version
+25ºC
−40ºC to
+85ºC
T Version
−55ºC to
+25ºC +125ºC
ANALOG SWITCH
Analog Signal Range
RON
40
100
∆RON
15
LEAKAGE CURRENTS
Source Off Leakage IS (OFF) ±0.5
Drain Off Leakage ID (OFF)
ADG408
±1
ADG409
±1
Channel On Leakage ID, IS (ON)
ADG408
±1
ADG409
±1
VSS to VDD
40
125
100
15
±50
±0.5
±100
±1
±50
±1
±100
±1
±50
±1
VSS to VDD
125
±50
±100
±50
±100
±50
DIGITAL INPUTS
Input High Voltage, VINH
2.4
2.4
Input Low Voltage, VINL
0.8
0.8
Input Current
IINL or IINH
±10
±10
CIN, Digital Input Capacitance 8
8
DYNAMIC CHARACTERISTICS¹
tTRANSITION
120
120
250
250
tOPEN
10
10
10
10
Unit
V
Ω typ
Ω max
Ω max
nA max
nA max
nA max
nA max
nA max
V min
V max
μA max
pF typ
ns typ
ns max
ns min
tON (EN)
tOFF (EN)
Charge Injection
OFF Isolation
85
125
150
225
65
150
20
−75
85
125
150
225
65
150
20
−75
ns typ
ns max
ns typ
ns max
pC typ
dB typ
Channel-to-Channel Crosstalk 85
85
dB typ
CS (OFF)
11
11
pF typ
CD (OFF)
ADG408
40
40
pF typ
ADG409
20
20
pF typ
CD, CS (ON)
ADG408
54
54
pF typ
ADG409
34
34
pF typ
Test Conditions/Comments
VD = ±10 V, IS = −10 mA
VD = +10 V, −10 V
VD = ±10 V, VS = m 10 V; see Figure 19
VD = ±10 V; VS = m 10 V; see Figure 20
VS = VD = ±10 V; see Figure 21
VIN = 0 or VDD
f = 1 MHz
RL = 300 Ω, CL = 35 pF;
VS1 = ±10 V, VS8 = m 10 V; see Figure 22
RL = 300 Ω, CL = 35 pF;
VS = 5 V; see Figure 23
RL = 300 Ω CL = 35 pF;
VS = 5 V; see Figure 24
RL = 300 Ω, CL = 35 pF;
VS = 5 V; see Figure 24
VS = 0 V, RS = 0 Ω, CL = 10 nF; see Figure 25
RL = 1 kΩ, f = 100 kHz;
VEN = 0 V; see Figure 26
RL = 1 kΩ, f = 100 kHz; see Figure 27
f = 1 MHz
f = 1 MHz
f = 1 MHz
Rev. C | Page 3 of 16