OP285GSZ Datasheet, PDF (2/16 Pages) Analog Devices – Dual 9 MHz Precision Operational Amplifier

OP285–SPECIFICATIONS (@ Vs = ؎15.0 V, TA = 25؇C, unless otherwise noted.)
Parameter
Symbol Conditions
Min
Typ
Max
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
V_OS
V_OS
I_B
I_B
I_OS
I_OS
V_CM
CMRR
Large-Signal Voltage Gain
Common-Mode Input Capacitance
Differential Input Capacitance
Long-Term Offset Voltage
Offset Voltage Drift
A_VO
A_VO
A_VO
∆V_OS
∆V_OS/∆T
–40°C ≤ T_A ≤ +85°C
V_CM = 0 V
V_CM = 0 V, –40°C ≤ T_A ≤ +85°C
V_CM = 0 V
V_CM = 0 V, –40°C ≤ T_A ≤ +85°C
V_CM = ± 10.5 V,
–40°C ≤ T_A ≤ +85°C
R_L = 2 kΩ
R_L = 2 kΩ, –40°C ≤ T_A ≤ +85°C
R_L = 600 Ω
Note 1
35
100
2
2
–10.5
80
106
250
175
200
7.5
3.7
1
250
600
350
400
± 50
± 100
10.5
300
OUTPUT CHARACTERISTICS
Output Voltage Swing
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
Supply Voltage Range
V_O
V_O
PSRR
PSRR
I_SY
I_SY
VS
RL = 2 kΩ
RL = 2 kΩ, –40°C ≤ T_A ≤ +85°C
RL = 600 Ω, V_S = ± 18 V
V_S = ± 4.5 V to ± 18 V
V_S = ± 4.5 V to ± 18 V,
–40°C ≤ T_A ≤ +85°C
V_S = ± 4.5 V to ± 18 V, V_O = 0 V,
R_L = x, –40°C ≤ T_A ≤ +85°C
V_S = ± 22 V, V_O, = 0 V, R_L = x
–40°C ≤ T_A ≤ +85°C
–13.5
–13
+13.9 +13.5
+13.9 +13
–16/+14
85
111
80
4
5
5.5
± 4.5
± 22
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
Settling Time
Distortion
Voltage Noise Density
Current Noise Density
Headroom
SR
GBP
␪o
t_s
t_s
e_n
e_n
i_n
R_L = 2 kΩ
To 0.1%, 10 V Step
To 0.01%, 10 V Step
A_V = 1, V_OUT = 8.5 V p-p,
f = 1 kHz, R_L = 2 kΩ
f = 30 Hz
f = 1 kHz
f = 1 kHz
THD + Noise ≤ 0.01%,
R_L = 2 kΩ, V_S = ± 18 V
15
22
9
62
625
750
–104
7
6
0.9
>12.9
NOTE
1_{Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent wafer lots at 125 °C, with an LTPD of 1.3.}
Specifications subject to change without notice.
Unit
µV
µV
nA
nA
nA
nA
V
dB
V/mV
V/mV
V/mV
pF
pF
µV
µV/°C
V
V
V
dB
dB
mA
mA
V
V/µs
MHz
Degrees
ns
ns
dB
nV/√Hz
nV/√Hz
pA/√Hz
dBu
–2–
REV. A