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BUF04_15 Datasheet, PDF (2/16 Pages) Analog Devices – Closed-Loop High Speed Buffer
BUF04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = ؎15.0 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol Conditions
Min Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Voltage Range
Offset Voltage Drift
Offset Null Range
VOS
IB
VCM
∆VOS/∆T
–40°C ≤ TA ≤ +85°C
VCM = 0
–40°C ≤ TA ≤ +85°C
0.3 1
1.3 4
0.7 5
2.2 10
± 13
30
± 25
mV
mV
µA
µA
V
µV/°C
mV
OUTPUT CHARACTERISTICS
OBSOLETE Output Voltage Swing
VO
Output Current – Continuous
Peak Output Current
TRANSFER CHARACTERISTICS
Gain
Gain Linearity
IOUT
IOUTP
AVCL
NL
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
PSRR
ISY
RL = 150 Ω,
–40°C ≤ TA ≤ +85°C
RL = 2 kΩ,
–40°C ≤ TA ≤ +85°C
Note 2
RL = 2 kΩ
–40°C ≤ TA ≤ +85°C
RL = 1 kΩ, VO = ± 10 V
RL = 150 kΩ
VS = ± 4.5 V to ± 18 V
–40°C ≤ TA ≤ +85°C
VO = 0 V, RL = ∞
–40°C ≤ TA ≤ +85°C
± 10.5 ± 11.1
V
± 10 ± 11
V
± 13 ± 13.5
V
± 13 ± 13.15
V
± 50 ± 65
mA
± 80
mA
0.995 0.9985 1.005
V/V
0.995 0.9980 1.005
V/V
0.005
%
0.008
%
76
93
dB
76
93
dB
6.9 8.5
mA
6.9 8.5
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ, CL = 70 pF
2000 3000
Bandwidth
Bandwidth
Bandwidth
Settling Time
Differential Phase
Differential Gain
BW
–3 dB, CL = 20 pF, RL = ∞
BW
–3 dB, CL = 20 pF, RL = 1 kΩ
BW
–3 dB, CL = 20 pF, RL = 150 Ω
VIN = ±10 V Step to 0.1%
f = 3.58 MHz, RL = 150 Ω
f = 4.43 MHz, RL = 150 Ω
f = 3.58 MHz, RL = 150 Ω
f = 4.43 MHz, RL = 150 Ω
110
110
110
60
0.02
0.03
0.014
0.008
Input Capacitance
3
V/µs
MHz
MHz
MHz
ns
Degrees
Degrees
%
%
pF
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
4
Current Noise Density
in
f = 1 kHz
2
NOTE
1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C with an LTPD of 1.3.
Specifications subject to change without notice.
nV/√Hz
pA/√Hz
–2–
REV. 0