REF191 Datasheet, PDF (14/24 Pages) Analog Devices – Precision Micropower, Low Dropout Voltage References

REF19x Series
WAFER TEST LIMITS (@ I_LOAD = 0 mA, T_A = 25؇C, unless otherwise noted.)
Parameter
Symbol
Condition
Limit
Unit
INITIAL ACCURACY
REF191
V_O
REF192
REF193
REF194
REF195
REF196
REF198
2.043/2.053
V
2.495/2.505
V
2.990/3.010
V
4.495/4.505
V
4.995/5.005
V
3.290/3.310
V
4.091/4.101
V
LINE REGULATION
⌬V_O /⌬V_IN
(V_O + 0.5 V) < V_IN < 15 V, I_OUT = 0 mA
15
LOAD REGULATION
⌬V_O /⌬I_LOAD
0 mA < I_LOAD < 30 mA, V_IN = (V_O + 1.3 V)
15
DROPOUT VOLTAGE
V_O – V+
I_LOAD = 10 mA
1.25
I_LOAD = 30 mA
1.55
SLEEP MODE INPUT
Logic Input High
V_IH
2.4
Logic Input Low
V_IL
0.8
SUPPLY CURRENT
V_IN = 15 V
No Load
45
Sleep Mode
No Load
15
ppm/V
ppm/mA
V
V
V
V
µA
µA
For proper operation, a 1 µF capacitor is required between the output pins and the GND pin of the REF19x. Electrical tests and wafer probe to the limits shown.
Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications
based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS¹
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +18 V
Output to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, V_S + 0.3 V
Output to GND Short-Circuit Duration . . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
REF19x . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
Package Type
␪_JA2
8-Lead PDIP (P)
103
8-Lead SOIC (S)
158
8-Lead TSSOP (RU)
240
␪_JC
Unit
43
°C/W
43
°C/W
43
°C/W
NOTES
1 _{Absolute maximum rating applies to both DICE and packaged parts, unless}
otherwise noted.
2 _{θJA is specified for worst case conditions, i.e., θJA is specified for device in socket for}
PDIP, and θ_JA is specified for device soldered in circuit board for SOIC package.
OUTPUT
6
DICE CHARACTERISTICS
OUTPUT
6
2
3
V؉
SLEEP
4
GND
REF19x Die Size 0.041” ϫ 0.057”, 2,337 Square Mils
Substrate Is Connected to V+, Number of Transistors:
Bipolar 25, MOSFET4. Process: CBCMOS1
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
REF19x features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
–14–
REV. E