AD9254R703F Datasheet, PDF (10/26 Pages) Analog Devices – 14-Bit, 105 MSPS, 1.8V Analog-Tp-Digital Converter

Table IIA Notes:
1/ PDA apply to subgroup 1 only. Delta's are not excluded from PDA.
2/ See Table IIB for delta parameters.
3/ Parameters marked with note 3/ in Table I are part of device initial characterization which is only repeated after design and
process changes or with subsequent wafer lots.
The test conditions and circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 test condition D of MIL-STD-883. Burn-in is performed at T_J ≥ +125°C.
HTRB is not applicable for this drawing.
The radiation exposure circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing and acquiring activity upon request. Total dose irradiation testing
shall be performed in accordance with MIL-STD-883 method 1019, condition A.
Wafer fabrication occurs at a MIL-PRF-38535 QML Class Q certified facility.
Full WLA per MIL-STD-883 TM 5007 is not available for this product. SEM inspection per MIL-STD-883
TM2018 is not applicable to the AD9254. The wafer fabrication process is manufactured using planarized
metallization.
Final test temperature range is -55°C – 110°C. No testing at +125°C.
240 hour Burn-in and 1000 hour Group C Life test performed at T_J ≥ 125°C (T_A = +110°C).