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MAT02_15 Datasheet, PDF (1/12 Pages) Analog Devices – Low Noise, Matched Dual Monolithic Transistor
a
Low Noise, Matched
Dual Monolithic Transistor
MAT02
FEATURES
PIN CONNECTION
Low Offset Voltage: 50 ␮V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max
High Gain (hFE):
TO-78
(H Suffix)
500 min at IC = 1 mA
300 min at IC = 1 ␮A
Excellent Log Conformance: rBE Ӎ 0.3 ⍀
Low Offset Voltage Drift: 0.1 ␮V/؇C max
Improved Direct Replacement for LM194/394
TE PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic tran-
sistors is optimized for very low noise, low drift and low rBE.
Precision Monolithics’ exclusive Silicon Nitride “Triple-
E Passivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (hFE) of the MAT02 is maintained over a wide
range of collector current. Exceptional characteristics of the
L MAT02 include offset voltage of 50 µV max (A/E grades) and
150 µV max F grade. Device performance is specified over the
full military temperature range as well as at 25°C.
Input protection diodes are provided across the emitter-base
O junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. The substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. This results in complete isola-
OBS tion between the transistors.
NOTE
Substrate is connected to case on TO-78 package.
Substrate is normally connected to the most negative
circuit potential, but can be floated.
The MAT02 should be used in any application where low
noise is a priority. The MAT02 can be used as an input
stage to make an amplifier with noise voltage of less than
1.0 nV/√Hz at 100 Hz. Other applications, such as log/antilog
circuits, may use the excellent logging conformity of the
MAT02. Typical bulk resistance is only 0.3 Ω to 0.4 Ω. The
MAT02 electrical characteristics approach those of an ideal
transistor when operated over a collector current range of 1
µA to 10 mA. For applications requiring multiple devices
see MAT04 Quad Matched Transistor data sheet.
REV. E
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© Analog Devices, Inc., 2002