MAT02 Datasheet, PDF (1/12 Pages) Analog Devices – Low Noise, Matched Dual Monolithic Transistor

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FEATURES
Low Offset Voltage: 50 ␮V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max
High Gain (h_FE): 500 min at I_C = 1 mA
300 min at I_C = 1 ␮A
Excellent Log Conformance: r_BE Ӎ 0.3 ⍀
Low Offset Voltage Drift: 0.1 ␮V/؇C max
Improved Direct Replacement for LM194/394
Available in Die Form
Low Noise, Matched
Dual Monolithic Transistor
MAT02
PIN CONNECTION
TO-78
(H Suffix)
PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic tran-
sistors is optimized for very low noise, low drift, and low r_BE.
Precision Monolithics’ exclusive Silicon Nitride “Triple-
Passivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (h_FE) of the MAT02 is maintained over a wide
range of collector current. Exceptional characteristics of the
MAT02 include offset voltage of 50 µV max (A/E grades) and
150 µV max F grade. Device performance is specified over the
full military temperature range as well as at 25°C.
Input protection diodes are provided across the emitter-base
junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. The substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. This results in complete isola-
tion between the transistors.
The MAT02 should be used in any application where low noise
is a priority. The MAT02 can be used as an input stage to make
an amplifier with noise voltage of less than 1.0 nV/√Hz at 100 Hz.
Other applications, such as log/antilog circuits, may use the ex-
cellent logging conformity of the MAT02. Typical bulk resis-
tance is only 0.3 Ω to 0.4 Ω. The MAT02 electrical charac-
teristics approach those of an ideal transistor when operated over
a collector current range of 1 µA to 10 mA. For applications re-
quiring multiple devices see MAT04 Quad Matched Transistor
data sheet.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
NOTE
Substrate is connected to case on TO-78 package. Sub-
strate is normally connected to the most negative circuit
potential, but can be floated.
ABSOLUTE MAXIMUM RATINGS¹
Collector-Base Voltage (BV_CBO) . . . . . . . . . . . . . . . . . . . . 40 V
Collector-Emitter Voltage (BV_CEO) . . . . . . . . . . . . . . . . . . 40 V
Collector-Collector Voltage (BV_CC) . . . . . . . . . . . . . . . . . . 40 V
Emitter-Emitter Voltage (BV_EE) . . . . . . . . . . . . . . . . . . . . . 40 V
Collector Current (I_C) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (I_E) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Total Power Dissipation
Case Temperature ≤ 40°C² . . . . . . . . . . . . . . . . . . . . . 1.8 W
Ambient Temperature ≤ 70°C³ . . . . . . . . . . . . . . . . 500 mW
Operating Temperature Range
MAT02A . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to +85°C
Operating Junction Temperature . . . . . . . . . . –55°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300°C
Junction Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
NOTES
1_{Absolute maximum ratings apply to both DICE and packaged devices.}
2_{Rating applies to applications using heat sinking to control case temperature.}
Derate linearly at 16.4 mW/°C for case temperature above 40°C.
3_{Rating applies to applications not using a heat sinking; devices in free air only.}
Derate linearly at 6.3 mW/°C for ambient temperature above 70°C.
ORDERING GUIDE¹
Model
MAT02AH²
MAT02EH
MAT02FH
V_OS max
Temperature
(T_A = +25؇C) Range
50 µV
50 µV
150 µV
–55°C to +125°C
–55°C to +125°C
–55°C to +125°C
Package
Option
TO-78
TO-78
TO-78
NOTES
1_{Burn-in is available on commercial and industrial temperature range parts in}
TO-can packages.
2_{For devices processed in total compliance to MIL-STD-883, add /883 after part}
number. Consult factory for 883 data sheet.
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