MAT01GHZ Datasheet, PDF (1/12 Pages) Analog Devices – Matched Monolithic Dual Transistor

Data Sheet
FEATURES
Low VOS (VBE match): 40 µV typical, 100 µV maximum
Low TCVOS: 0.5 µV/°C maximum
High hFE: 500 minimum
Excellent hFE linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min
APPLICATIONS
Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers
GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
silicon nitride triple passivation process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV,
temperature drift of 0.15 µV/°C, and hFE matching of 0.7%.
Matched Monolithic
Dual Transistor
MAT01
PIN CONNECTION DIAGRAM
MAT01
TOP VIEW
(Not to Scale)
C_{1 1}
6 ^C2
B₁ 2
5 B₂
E₁ ³
4 _E2
NOTES
1. SUBSTRATE IS CONNECTED TO CASE.
Figure 1.
High hFE is provided over a six decade range of collector
current, including an exceptional hFE of 590 at a collector
current of only 10 nA. The high gain at low collector current
makes the MAT01 ideal for use in low power, low level input
stages.
Rev. C
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