MAT01 Datasheet, PDF (1/8 Pages) Analog Devices – Matched Monolithic Dual Transistor

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FEATURES
Low V_OS (V_BE Match): 40 ␮V typ, 100 ␮V max
Low TCV_OS: 0.5 ␮V/؇C max
High h_FE: 500 min
Excellent h_FE Linearity from 10 nA to 10 mA
Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV, tem-
perature drift of 0.15 µV/°C, and h_FE matching of 0.7%. Very
high h_FE is provided over a six decade range of collector current,
including an exceptional h_FE of 590 at a collector current of only
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
Matched Monolithic
Dual Transistor
MAT01
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
REV. A
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