HMC930A Datasheet, PDF (1/16 Pages) Analog Devices – Test instrumentation

Data Sheet
GaAs, pHEMT, MMIC,
0.25 W Power Amplifier, DC to 40 GHz
HMC930A
FEATURES
High output power for 1 dB compression (P1dB): 22 dBm
High saturated output power (PSAT): 24 dBm
High gain: 13 dB
High output third-order intercept (IP3): 33.5 dBm
Supply voltage: 10 V at 175 mA
50 Ω matched input/output
Die size: 2.82 mm × 1.50 mm × 0.1 mm
APPLICATIONS
Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics
GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (GaAs), pseudomorphic,
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), distributed power amplifier that
operates from dc to 40 GHz. The HMC930A provides 13 dB of
gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB
gain compression, requiring 175 mA from a 10 V supply. The
HMC930A exhibits a slightly positive gain slope from 8 GHz to
FUNCTIONAL BLOCK DIAGRAM
34
HMC930A
2 ^VGG2
1 _RFIN
RFOUT/V_DD ⁵
V_GG1 ₈
76
Figure 1.
32 GHz, making it ideal for electronic warfare (EW), electronic
countermeasures (ECM), radar, and test equipment
applications. The HMC930A amplifier inputs/outputs (I/Os) are
internally matched to 50 Ω, facilitating integration into multichip
modules (MCMs). All data is taken with the chip connected via
two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm
(12 mils).
Rev. 0
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