HMC8410 Datasheet, PDF (1/16 Pages) Analog Devices – Low noise figure: 1.1 dB typical

Data Sheet
0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
HMC8410CHIPS
FEATURES
Low noise figure: 1.1 dB typical
High gain: 19.5 dB typical
High output third-order intercept (IP3): 33 dBm typical
Die size: 0.95 mm × 0.61 × 0.102 mm
APPLICATIONS
Software defined radios
Electronics warfare
Radar applications
GENERAL DESCRIPTION
The HMC8410CHIPS is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband ampli-
fier that operates from 0.01 GHz to 10 GHz. The HMC8410CHIPS
provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure,
and a typical output IP3 of 33 dBm, requiring only 65 mA from
a 5 V supply voltage. The saturated output power (PSAT) of
FUNCTIONAL BLOCK DIAGRAM
RFIN/V_GG1 1
2 RFOUT/V_DD
HMC8410CHIPS
Figure 1.
22.5 dBm enables the low noise amplifier (LNA) to function as a
local oscillator (LO) driver for many of Analog Devices, Inc.,
balanced, I/Q or image rejection mixers.
The HMC8410CHIPS also features inputs/outputs (I/Os) that are
internally matched to 50 Ω, making it ideal for surface-mounted
technology (SMT)-based, high capacity microwave radio
applications.
Rev. 0
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