HMC784A Datasheet, PDF (1/9 Pages) Analog Devices – GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz

HMC784AMS8GE
v01.0117
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Typical Applications
The HMC784AMS8GE is ideal for:
• Cellular/4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
Functional Diagram
Features
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +60 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.3 dB
MSOP8G Package: 14.8 mm²
General Description
The HMC784AMS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS logic families.
Electrical Specifications,
T_A = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min.
Typ.
Insertion Loss
DC - 1.0 GHz
0.3
DC - 2.0 GHz
0.3
DC - 2.5 GHz
0.4
DC - 3.0 GHz
0.4
DC - 4.0 GHz
0.7
Isolation
DC - 4.0 GHz
24
28
Return Loss (On State)
DC - 1.0 GHz
30
DC - 2.0 GHz
26
DC - 3.0 GHz
20
DC - 4.0 GHz
14
Input Power for 0.1dB Compression
Vdd = +3V
31
Vdd = +5V 1.0 - 4.0 GHz
36
Vdd = +8V
38
Input Power for 1dB Compression
Vdd = +3V
32
33
Vdd = +5V 0.1 - 4.0 GHz
35
38
Vdd = +8V
38
40
0.02 - 0.1 GHz
61
Input Third Order Intercept
0.1 - 2.0 GHz
62
(Two-tone input power = +27 dBm each tone)
0.1 - 3.0 GHz
61
0.1 - 4.0 GHz
60
Switching Characteristics
tRISE, tFALL (10/90% RF) _{DC - 4.0 GHz}
82
tON, tOFF (50% CTL to 10/90% RF)
112
Max.
0.6
0.8
0.9
1.0
1.5
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
ns
ns
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