HMC772LC4 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz

v02.0514
Typical Applications
This HMC772LC4 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC772LC4
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Features
Noise Figure: 1.8 dB
Gain: 15 dB
Output IP3: +25 dBm
P1dB Output Power: +13 dBm
50 Ohm Matched Input/Output
Supply Voltage: +4V @ 45 mA
24 Lead Ceramic 4x4mm SMT Package: 16mm²
General Description
The HMC772LC4 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier which operates between 2 and
12 GHz. The amplifier provides 15 dB of gain, 1.8 dB
noise figure up to 12 GHz and output IP3 of +25 dBm,
while requiring only 45 mA from a +4V supply voltage.
The Psat output power of up to +15 dBm enables the
LNA to function as a LO driver for many of HIttite’s
balanced, I/Q or image reject mixers. The HMC772LC4
also features I/Os that are DC blocked and internally
matched to 50 Ohms, making it ideal for SMT based
high capacity microwave radio applications. The
HMC772LC4 is housed in a RoHS compliant 4x4 mm
QFN leadless ceramic package.
Electrical Specifications, T_A = +25° C, Vdd= +4V, Idd = 45 mA*
Parameter
Min.
Typ.
Frequency Range
2 - 12
Gain
14
15
Gain Variation over Temperature
0.01
Noise Figure
1.8
Input Return Loss
15
Output Return Loss
15
Output Power for 1 dB Compression
13
Output Third Order Intercept (IP3)
25
Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)*
45
* Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical.
Max.
2.5
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
mA
1
Irrliniecg_Ffseohpn_{otrsomsrenoasftpiisibtohringilriirtdcyafunpie}rstnae_{,airdstsihdesbesuye}dmthi_{lmebaivdtypmelbiAcPyaranyyAhtaiorlnooenaagslnuoonlDrgetd}eofD_:rvtoheitm9cev_oeri_{7cwistesp8issiuse-lfsao2}beur_{c.ne5idtSlies0}eepvure_-es_oca3dein_rf,iy3cdtnoaop_{4etriabo3rftenoessrna:tascnouH}cyrbu_Fjipierntaa_{acftrttteieixnttnoge:}atecnr_{9mhdiMga7ehnrnte8igstc}lsei_-ao_ro2bwf_{oflAie5ptwhn.a0oatHuealo-tongv3}wntso_eDe3otviecr7e_Cveori3,.cth_{oeNnesoorr.poOFOProarhndroteinepoTerreni:ccO7,eh82,nn1od--E3lleoil2lngii9vzeye-a4rWaby7,at0eya0wt,nh•Pdw.ODOwtor.rdi.Bvephoreliaxto,ctn9ieCtl1ein0ho.e6rced,aoleNmtmrwoss:rwwfAowonro.adadln,o,agMMloADgAe.0cv02oic01me68s22,-94In10c.6,}
Trademarks and registered trademarks a_Are_pth_pe_lp_ir_cop_ae_tr_ity_oo_nf th_Sei_ur r_pes_ppe_oct_riv_te_: o_Pw_hne_ors_n. _{e: 978-250-33}A₄p₃plic_oa_rtio_an_pS_pu_sp_@po_hrt_i:_tP_tih_teo_.n_ce_o: 1_m-800-ANALOG-D